MRF300BN, РЧ полевой транзистор, 133 В, 272 Вт, 1.8 МГц

3326,40 ₽

Артикул: 93a2803aef65 Категория:

      Описание

      MRF300BN, РЧ полевой транзистор, 133 В, 272 Вт, 1.8 МГц These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub—GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 250 MHz.

      • Unmatched input and output allowing wide frequency range utilization
      • Two opposite pin-connection versions (A and B) to be used in a push-pull, two-up configuration for wideband performance
      • Characterized from 30 to 50 V
      • Suitable for linear application
      • Integrated ESD protection with greater negative

      Полупроводники — ДискретныеТранзисторыРЧ Полевые Транзисторы

      Детали
      Бренд

      NXP SEMICONDUCTOR
      Максимальная Рабочая Температура

      175 C
      Количество Выводов

      3вывод(-ов)
      Рассеиваемая Мощность

      272Вт
      Корпус РЧ Транзистора

      to-247
      Напряжение Истока-стока Vds

      133В
      Наименование

      MRF300BN, РЧ полевой транзистор, 133 В, 272 Вт, 1.8 МГц, 250 МГц, TO-247